First principles calculation of isolated intermediate bands formation in a transition metal-doped chalcopyrite-type semiconductor-Reference-Cited by-同舟云学术

First principles calculation of isolated intermediate bands formation in a transition metal-doped chalcopyrite-type semiconductor

Published:2006-05 Issue:6 Volume:203 Page:1395-1401
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Palacios P.,Sánchez K.,Conesa J. C.,Wahnón P.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Ab initioelectronic structure calculations for metallic intermediate band formation in photovoltaic materials

3. Ab-initio spin polarized electronic structure calculations for TixGanAsm photovoltaic materials

4. Accurate and simple analytic representation of the electron-gas correlation energy

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