Interplay between Order and Disorder in the High Performance of Amorphous Transparent Conducting Oxides-Reference-Cited by-同舟云学术

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Interplay between Order and Disorder in the High Performance of Amorphous Transparent Conducting Oxides

Published:2009-10-15 Issue:21 Volume:21 Page:5119-5124
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Walsh Aron¹,Da Silva Juarez L. F.²,Wei Su-Huai³

Affiliation:

1. University College London, Department of Chemistry, Materials Chemistry, 3rd Floor, Kathleen Lonsdale Building, London WC1E 6BT, U.K.

2. Instituto de Física de São Carlos, Universidade de São Paulo, Caixa Postal 369, São Carlos, 13560-970 SP, Brazil

3. National Renewable Energy Laboratory, Golden, Colorado 80401

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm9020113

Reference62 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Inorganic Semiconductors for Flexible Electronics

3. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

4. The Remarkable Thermal Stability of Amorphous In-Zn-O Transparent Conductors

5. High mobility undoped amorphous indium zinc oxide transparent thin films

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