Band Gap Engineering of Oxide Photoelectrodes: Characterization of ZnO1

Band Gap Engineering of Oxide Photoelectrodes: Characterization of ZnO1–xSex

Published:2012-07-12 Issue:29 Volume:116 Page:15281-15289
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Mayer Marie A.¹²,Yu Kin Man¹,Speaks Derrick T.¹²,Denlinger Jonathan D.³,Reichertz Lothar A.¹,Beeman Jeffrey W.¹,Haller Eugene E.¹²,Walukiewicz Wladek¹

Affiliation:

1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

2. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States

3. Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp304481c

Reference49 articles.

1. Sustainable Hydrogen Production

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4. Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping

5. Identification of Active Edge Sites for Electrochemical H 2 Evolution from MoS 2 Nanocatalysts

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