Copper(I) tert-Butyl 3-Oxobutanoate Complexes as Precursors for Chemical Vapor Deposition of Copper
Author:
Affiliation:
1. Beckman Institute for Advanced Science and Technology, University of Illinois at UrbanaChampaign, 405 North Mathews Avenue, Urbana, Illinois 61801
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm980343k
Reference13 articles.
1. Norman, J. A. T.; Muratore, B. A.; Dyer, P. N.; Roberts, D. A., Hochberg, A. K. June 11−12, 1991 VMIC Conference, IEEE, p 123.
2. Chemical vapor deposition of copper from 1,5‐cyclooctadiene copper(I) hexafluoroacetylacetonate
3. Chemical vapor deposition of copper from (hexafluoroacetylacetonato)(alkyne)copper(I) complexes via disproportionation
4. A novel copper complex and CVD precursor: (.eta.2-butyne)copper(I) hexafluoroacetylacetonate
5. Hot-wall chemical vapor deposition of copper from copper(I) compounds. 2. Selective, low-temperature deposition of copper from copper(I) .beta.-diketonate compounds, (.beta.-diketonate)CuLn, via thermally induced disproportionation reactions
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