Dissociative Chemisorption of Trimethylgallium, Trimethylindium, and Ammonia on Gallium and Indium Nitride Substrates. A Computational Study
Author:
Affiliation:
1. Chemistry Department, Spelman College, Atlanta, Georgia 30314-4399, United States
2. School of Earth & Atmospheric Sciences, Georgia Institute of Technology, Atlanta, Georgia 30332-0340, United States
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp1123635
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5. Dietz, N.Indium-nitride growth by HPCVD: Real-time and ex-situ characterization. InIII-Nitrides Semiconductor Materials;Feng, Z. C., Ed.Imperial College Press:London, 2006; ISBN 1-86094-636-4, Chapter 6, pp203–235.
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