Effect of Cluster Ion Analysis Fluence on Interface Quality in SIMS Molecular Depth Profiling-Reference-Cited by-同舟云学术

Effect of Cluster Ion Analysis Fluence on Interface Quality in SIMS Molecular Depth Profiling

Published:2009-11-10 Issue:12 Volume:114 Page:5338-5343
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Szakal Christopher¹,Hues Steven M.¹,Bennett Joe¹,Gillen Greg¹

Affiliation:

1. Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899-8371, Micron Technology, Inc., 8000 S. Federal Way, P.O. Box 6, MS 1-717, Boise, Idaho 83707-0006, and SVTC Technologies, 2706 Montopolis Drive, Austin, Texas 78741

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp905019x

Reference49 articles.

1. Preliminary evaluation of an SF5+ polyatomic primary ion beam for analysis of organic thin films by secondary ion mass spectrometry

2. Surface Analysis Studies of Yield Enhancements in Secondary Ion Mass Spectrometry by Polyatomic Projectiles

3. Impact Energy Dependence of SF5+-Induced Damage in Poly(methyl methacrylate) Studied Using Time-of-Flight Secondary Ion Mass Spectrometry

4. Characterization of AgAsS and AgSbS amorphous films prepared by pulsed laser deposition

5. Characterization of AgAsS and AgSbS amorphous films prepared by pulsed laser deposition

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