Hydrogenated Carbon−Lead Films Plasma-Deposited from Tetraethyllead in a Three-Electrode Reactor
Author:
Affiliation:
1. Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, 90-363 Lodz, Poland
2. Institut de Topologie et de Dynamique des Systemes, Universite Paris VII, 1 rue Guy de la Brosse, 75005 Paris, France
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm980312p
Reference38 articles.
1. Dielectric and semiconducting Ge-C and Si-C thin films prepared by plasma deposition from organic compounds
2. Correlations between process parameters, chemical structure and electronic properties of amorphous hydrogenated GexC1−x films prepared by plasma-enhanced chemical vapour deposition in a three-electrode reactor
3. Tyczkowski, J.; Kazimierski, P.J. Phys. D: Appl. Phys.1994,27, 179.
4. Electrical and optical properties of carbon-tin films plasma-deposited from tetramethyltin in a three-electrode reactor
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2. Transition from Amorphous Semiconductor to Amorphous Insulator in Hydrogenated Carbon−Germanium Films Investigated by Raman Spectroscopy;Chemistry of Materials;2002-10-18
3. Amorphous semiconductor and amorphous insulator — two kinds of hydrogenated carbon–silicon films fabricated in the three-electrode reactor;Surface and Coatings Technology;2001-07
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