Band Gap Opening of Bilayer Graphene by F4-TCNQ Molecular Doping and Externally Applied Electric Field-Reference-Cited by-同舟云学术

Band Gap Opening of Bilayer Graphene by F4-TCNQ Molecular Doping and Externally Applied Electric Field

Published:2010-08-06 Issue:35 Volume:114 Page:11377-11381
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Tian Xiaoqing¹,Xu Jianbin¹,Wang Xiaomu¹

Affiliation:

1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR, P. R. China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp102800v

Reference38 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The electronic properties of graphene

3. The rise of graphene

4. Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001)

5. Excitonic Effects on the Optical Response of Graphene and Bilayer Graphene

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