Self-Aligned T-Gate High-Purity Semiconducting Carbon Nanotube RF Transistors Operated in Quasi-Ballistic Transport and Quantum Capacitance Regime-Reference-Cited by-同舟云学术

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Self-Aligned T-Gate High-Purity Semiconducting Carbon Nanotube RF Transistors Operated in Quasi-Ballistic Transport and Quantum Capacitance Regime

Published:2012-07-13 Issue:8 Volume:6 Page:6936-6943
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Che Yuchi¹,Badmaev Alexander¹,Jooyaie Alborz²,Wu Tao²,Zhang Jialu¹,Wang Chuan¹,Galatsis Kosmas²,Enaya Hani A.³,Zhou Chongwu¹

Affiliation:

1. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States

2. Aneeve Nanotechnologies LLC, UCLA California Nanosystems Institute, Los Angeles, California 90095, United States

3. King Abdulaziz City for Science and Technology, Riyadh, Saudi Arabia

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn301972j

Reference33 articles.

1. Extraordinary Mobility in Semiconducting Carbon Nanotubes

2. Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube Transistors

3. Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

4. Logic Circuits with Carbon Nanotube Transistors

5. Carbon Nanotube Inter- and Intramolecular Logic Gates

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2. Improving Carbon Nanotube-Based Radiofrequency Field-Effect Transistors by the Device Architecture and Doping Process;ACS Applied Materials & Interfaces;2024-02-27

3. Advances in separation of monochiral semiconducting carbon nanotubes and the application in electronics;Journal of Applied Physics;2023-12-18

4. The Effect of Charge Traps on Leakage Current in Sensitive Nano-Sensors Based on Single-Walled Carbon Nanotube Field-Effect Transistors (SWCNT-FET);Journal of Electronic Materials;2022-04-16

5. Carbon based electronic technology in post-Moore era: progress, applications and challenges;Acta Physica Sinica;2022

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