Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior-Reference-Cited by-同舟云学术

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

Published:2014-09-15 Issue:19 Volume:6 Page:16537-16544
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liang Kai-De¹,Huang Chi-Hsin¹,Lai Chih-Chung¹,Huang Jian-Shiou¹,Tsai Hung-Wei¹,Wang Yi-Chung¹,Shih Yu-Chuan¹,Chang Mu-Tung²,Lo Shen-Chuan²,Chueh Yu-Lun¹

Affiliation:

1. Department of Materials Science & Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2. Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsin-Chu 31040, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am502741m

Reference44 articles.

1. Nanoionics-based resistive switching memories

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Resistive switching in transition metal oxides

4. Memristive devices for computing

5. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

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