Raman Scattering Studies of Electrically Active Impurities in in Situ B-Doped Silicon Nanowires: Effects of Annealing and Oxidation-Reference-Cited by-同舟云学术

Raman Scattering Studies of Electrically Active Impurities in in Situ B-Doped Silicon Nanowires: Effects of Annealing and Oxidation

Published:2007-10-01 Issue:42 Volume:111 Page:15160-15165
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kawashima Takahiro¹,Imamura Goh¹,Saitoh Tohru¹,Komori Kazunori¹,Fujii Minoru¹,Hayashi Shinji¹

Affiliation:

1. Advanced Devices Development Center, Matsushita Electric Industrial Company, Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan, Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan, and Image Devices Development Center, Matsushita Electric Industrial Company, Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp074495r

Reference21 articles.

1. High Performance Silicon Nanowire Field Effect Transistors

2. Single-nanowire electrically driven lasers

3. Effect of diborane on the microstructure of boron-doped silicon nanowires

4. Measuring the specific contact resistance of contacts to semiconductor nanowires

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