High-Temperature Oxidation of SiC-Based Composite: Rate Constant Calculation from ReaxFF MD Simulations, Part II
Author:
Affiliation:
1. CFD Research Corp., 215 Wynn Drive, Huntsville, Alabama 35805, United States
2. Department of Mechanical and Nuclear Engineering, Penn State University, 136 Research Building East, University Park, Pennsylvania 16802, United States
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp307680t
Reference69 articles.
1. Multilayer SiC for thermal protection system of space vehicles: Manufacturing and testing under simulated re-entry conditions
2. A Perspective on Modeling Materials in Extreme Environments: Oxidation of Ultrahigh-Temperature Ceramics
3. A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
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