Kinetic to Transport-Limited Anhydrous HF Etching of Silicon Oxynitride Films in Supercritical CO2-Reference-Cited by-同舟云学术

Kinetic to Transport-Limited Anhydrous HF Etching of Silicon Oxynitride Films in Supercritical CO2

Published:2007-10-01 Issue:42 Volume:111 Page:15251-15257
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Morrish Rachel¹,Witvrouw Ann¹,Muscat Anthony J.¹

Affiliation:

1. Department of Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona 85721, and Interuniversity Micro-Electronics Center, Kapeldreef 75, B-3001 Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp072449l

Reference42 articles.

1. A method for the analysis of multiphase bonding structures in amorphous SiOxNy films

2. Nitrogen Incorporation in Thin Silicon Oxides in a N 2 O Plasma: Effects of Processing Conditions

3. Chemical, optical, vibrational and luminescent properties of hydrogenated silicon-rich oxynitride films

4. Fabrication of PECVD-silicon oxynitride-based optical waveguides

5. X-ray photoelectron spectroscopy and structural analysis of amorphous SiOxNy films deposited at low temperatures

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