Gate-Voltage-Controlled Spin and Valley Polarization Transport in a Normal/Ferromagnetic/Normal MoS2 Junction-Reference-Cited by-同舟云学术

Gate-Voltage-Controlled Spin and Valley Polarization Transport in a Normal/Ferromagnetic/Normal MoS2 Junction

Published:2014-01-13 Issue:3 Volume:6 Page:1759-1764
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Hai¹,Shao Jianmei¹,Yao Daoxin¹,Yang Guowei¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am4047602

Reference38 articles.

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5. Evidence for Dirac Fermions in a Honeycomb Lattice Based on Silicon

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