Atomic Layer Deposition of AlF3 Thin Films Using Halide Precursors
Author:
Affiliation:
1. Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland
2. Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland
Funder
Finnish Centre of Excellence in Atomic Layer Deposition, University of Helsinki
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm504238f
Reference40 articles.
1. Band diagram of the AlF3∕SiO2∕Si system
2. Experimental determination of optical constants of MgF2 and AlF3 thin films in the vacuum ultra-violet wavelength region (60–124nm), and its application to optical designs
3. Effects of substrate temperatures and deposition rates on properties of aluminum fluoride thin films in deep-ultraviolet region
4. Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography
5. Fluoride antireflection coatings for deep ultraviolet optics deposited by ion-beam sputtering
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