Role of Interfacial Aluminum Silicate and Silicon as Barrier Layers for Atomic Layer Deposition of Al2O3 Films on Chemically Cleaned InP(100) Surfaces-Reference-Cited by-同舟云学术

Role of Interfacial Aluminum Silicate and Silicon as Barrier Layers for Atomic Layer Deposition of Al2O3 Films on Chemically Cleaned InP(100) Surfaces

Published:2014-10-10 Issue:50 Volume:118 Page:29164-29179
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cabrera Wilfredo¹,Halls Mathew D.²,Povey Ian M.³,Chabal Yves J.¹

Affiliation:

1. Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States

2. Schrödinger Inc., Ste. 203, 5820 Oberlin Drive, San Diego, California 92121, United States

3. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

Funder

Division of Chemistry

Science Foundation Ireland

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp5052084

Reference84 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

3. Advances in high κ gate dielectrics for Si and III–V semiconductors

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