Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders-Reference-Cited by-同舟云学术

Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders

Published:2001-03-09 Issue:13 Volume:105 Page:2507-2514
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Pan Z. W.¹,Dai Z. R.¹,Xu L.¹,Lee S. T.¹,Wang Z. L.¹

Affiliation:

1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, Center of Super-Diamond and Advanced Film, Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp004253q

Reference21 articles.

1. Semiconductor Clusters, Nanocrystals, and Quantum Dots

2. Oxidation of sub-50 nm Si columns for light emission study

3. Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics

4. Polycrystalline silicon ‘‘slit nanowire’’ for possible quantum devices

5. Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy

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