2007 IEEE Device Research Conference: Tour de Force Multigate and Nanowire Metal Oxide Semiconductor Field-Effect Transistors and Their Application
Author:
Affiliation:
1. Departments of Chemistry and Physics
2. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802-6300
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn7001344
Reference13 articles.
1. Balasubramanian, N., Singh, N., Rustagi, S. C., Kavitha;Agarwal, A., Gao, Z.Q., Lo, G. Q., and Kwong, D. L.Silicon Nanowire Field EffectDevices By Top-Down CMOS Technology.DeviceResearch Conference, 65th DRC, Conference Digest;2007,pp47–48.
2. Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go?
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