Barrier Height Measurement of Metal Contacts to Si Nanowires Using Internal Photoemission of Hot Carriers
Author:
Affiliation:
1. Materials Science and Engineering, Northwestern University, 2220 Campus Dr., Evanston, Illinois 60208, United States
2. Department of Physical Electronics, School of Electrical Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl4035412
Reference39 articles.
1. Electrical contacts to one- and two-dimensional nanomaterials
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3. Bias dependence of Schottky barrier height in GaAs from internal photoemission and current‐voltage characteristics
4. Photodetection with Active Optical Antennas
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