Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition-Reference-Cited by-同舟云学术

Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition

Published:2009-12-14 Issue:1 Volume:132 Page:36-37
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Milanov Andrian P.¹,Xu Ke¹,Laha Apurba¹,Bugiel Eberhard¹,Ranjith Ramadurai¹,Schwendt Dominik¹,Osten H. Jörg¹,Parala Harish¹,Fischer Roland A.¹,Devi Anjana¹

Affiliation:

1. Inorganic Chemistry II, Ruhr-University Bochum, 44801 Bochum, Germany, and Institute of Electronic Materials and Devices, Leibniz University, 30167 Hannover, Germany

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja909102j

Reference16 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors

2. Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies

3. Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application

4. 0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

5. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

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