Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films-Reference-Cited by-同舟云学术

Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films

Published:2010-01-20 Issue:3 Volume:10 Page:1084-1089
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Katase Takayoshi¹,Nomura Kenji²,Ohta Hiromichi²³,Yanagi Hiroshi¹,Kamiya Toshio¹²,Hirano Masahiro²⁴,Hosono Hideo¹²⁴

Affiliation:

1. Materials and Structures Laboratory, Mailbox R3-1, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

2. ERATO-SORST, Japan Science and Technology Agency (JST), in the Frontier Research Center, S2-6F East, Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

3. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

4. Frontier Research Center, S2-6F East, Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg900616c

Reference29 articles.

1. Electrical properties of bulk ZnO

2. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

3. Blue Light-Emitting Diode Based on ZnO

4. Quantum Hall Effect in Polar Oxide Heterostructures

5. High Electron Mobility Exceeding 104cm2V-1s-1in MgxZn1-xO/ZnO Single Heterostructures Grown by Molecular Beam Epitaxy

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