Effect of Oxygen Plasma Treatment on Crystal Growth Mode at Pentacene/Ni Interface in Organic Thin-Film Transistors-Reference-Cited by-同舟云学术

Effect of Oxygen Plasma Treatment on Crystal Growth Mode at Pentacene/Ni Interface in Organic Thin-Film Transistors

Published:2010-10-28 Issue:46 Volume:114 Page:14854-14859
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Song Bang Joo¹,Hong Kihyon¹,Kim Woong-Kwon¹,Kim Kisoo¹,Kim Sungjun¹,Lee Jong-Lam¹

Affiliation:

1. Division of Advanced Materials Science and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk, 789-784, Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp106364v

Reference42 articles.

1. Ink-Jet-Printed Organic−Inorganic Hybrid Dielectrics for Organic Thin-Film Transistors

2. Effect of oxygen plasma treatment on reduction of contact resistivity at pentacene/Au interface

3. From Oxide Surface to Organic Transistor Properties: The Nature and the Role of Oxide Gate Surface Defects

4. Unipolar-to-Ambipolar Conversion of Organic Thin-Film Transistors by Organosilane Self-Assembled Monolayer

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