Work Function Modulation and Thermal Stability of Reduced Graphene Oxide Gate Electrodes in MOS Devices
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
2. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am404649a
Reference67 articles.
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