Comparison of Acid Generation in EUV Lithography Films of Poly(4-hydroxystyrene) (PHS) and Noria Adamantyl Ester (Noria-AD50)
Author:
Affiliation:
1. Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556, United States
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp300677q
Reference59 articles.
1. Lithographic Imaging Techniques for the Formation of Nanoscopic Features
2. Polymer materials for microlithography
3. Chemical Amplification in High-Resolution Imaging Systems
4. Advances in Patterning Materials for 193 nm Immersion Lithography
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1. Electron trapping: a mechanism for acid production in extreme ultraviolet photoresists;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-07-23
2. Molecular Glass Photoresists with High Resolution, Low LER, and High Sensitivity for EUV Lithography;Macromolecular Materials and Engineering;2018-05-03
3. Polymer effects on PAG acid yield in EUV resists (Conference Presentation);Advances in Patterning Materials and Processes XXXV;2018-03-21
4. Driving Force Dependence of Electron Transfer from Electronically Excited [Ir(COD)(μ-Me2pz)]2 to Photo-Acid Generators;The Journal of Physical Chemistry A;2017-09-28
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