Photocurrent Response of MoS2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N2 Gas Environments-Reference-Cited by-同舟云学术

Photocurrent Response of MoS2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N2 Gas Environments

Published:2014-11-26 Issue:23 Volume:6 Page:21645-21651
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Khan M. F.¹,Iqbal M. W.¹,Iqbal M. Z.¹,Shehzad M. A.¹,Seo Y.¹,Eom Jonghwa¹

Affiliation:

1. Department of Physics and Graphene Research Institute and ‡Faculty of Nanotechnology & Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am506716a

Reference61 articles.

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2. The rise of graphene

3. The electronic properties of graphene

4. Single-layer MoS2 transistors

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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