High Responsivity in Monolayer MoS<sub>2</sub> Photodetector via Controlled Interfacial Carrier Trapping-Reference-Cited by-同舟云学术

High Responsivity in Monolayer MoS₂ Photodetector via Controlled Interfacial Carrier Trapping

Published:2023-02-03 Issue:2 Volume:5 Page:1077-1087
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Sahoo Sandhyarani¹²^ORCID,Sahu Mousam Charan¹²^ORCID,Mallik Sameer Kumar¹²^ORCID,Jena Anjan Kumar¹²^ORCID,Pradhan Gopal K.³^ORCID,Sahoo Satyaprakash¹²^ORCID

Affiliation:

1. Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar751005, India

2. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai400094, India

3. Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar, Odisha751024, India

Funder

Science and Engineering Research Board

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01567

Reference54 articles.

1. Two-dimensional atomic crystals

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Synthesis, properties, and optoelectronic applications of two-dimensional MoS2 and MoS2-based heterostructures

4. Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

5. Ultrasensitive photodetectors based on monolayer MoS2

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