Design and Growth of Quaternary Mg and Ga Codoped ZnO Thin Films with Transparent Conductive Characteristics-Reference-Cited by-同舟云学术

Design and Growth of Quaternary Mg and Ga Codoped ZnO Thin Films with Transparent Conductive Characteristics

Published:2011-09-26 Issue:11 Volume:11 Page:4819-4824
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Shin Seung Wook¹,Kim In Young²,Lee Gyoung Hoon²,Agawane G.L.²,Mohokar A.V.³,Heo Gi-Seok⁴,Kim Jin Hyeok²,Lee Jeong Yong¹

Affiliation:

1. Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, South Korea

2. Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500-757, South Korea

3. Department of Physics, Shivaji University, Kolhapur 416 004, M.S., India

4. Development of Advanced Components & Materials, Korea Institute of Industrial Technology, Gwangju,500-480, South Korea

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg2005387

Reference21 articles.

1. Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy

2. Influence of thermal annealing ambient on Ga-doped ZnO thin films

3. Dependence of the resistivity and the transmittance of sputter-deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature

4. Structural, electrical, and optical characterizations of epitaxial Zn1−xGaxO films grown on sapphire (0001) substrate

5. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films

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