Affiliation:
1. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Énergie Technopole de Borj‐Cédria Hammam Lif Tunis Tunisia
2. Université de Gabès, Laboratoire de Physique des Matériaux et des Nanomatériaux appliqué à l'environnement Faculté des Sciences de Gabès, Erriadh, Zrig Gabes Tunisia
3. Université de Carthage, Laboratoire des Matériaux Molécules et Applications IPEST La Marsa Tunis Tunisia
Abstract
AbstractThe aim of this study is to investigate the performance of chemically deposited Ga doped ZnO (GZO) thin film for enhanced UV and visible light detection. Transparent thin film was grown on glass substrates by a spray pyrolysis technique. The Ga doping concentration was maintained at 1 at.% in the solution. The influence of gallium concentration in zinc oxide (ZnO) films on structural, morphological, electrical, and optical properties was studied.Measurements of the photoconductivity were performed by DC electrical tool under visible and UV illuminations. Obtained results reported in this study on the performances of the fabricated GZO based device reveal that the photoresponse, rapidity, photosensivity, responsivity, detectivity, and reproducibility of the device are very interesting in photodetection, especially in UV wavelength domain. We notice that the device has a good responsivity as compared to detectors fabricated using other techniques, with a rather good repeatability. Furthermore, the electronic conductivity mechanism is modeled as an ohmic one.