Numerical modelling of different Si sensor design for the HEP experiments
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Sissa Medialab
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment;Journal of Instrumentation;2024-05-01
2. TCAD simulation of the mixed irradiated n-MCz Si detector: Impact on space charges, electric field distribution;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-04
3. Design and development of radiation hard p+n Si pixel detector for the next generation photon science experiment;Materials Today: Proceedings;2020
4. Capacitances in P+N Silicon Pixel Sensors Using 3-D TCAD Simulation Approach;Si Detectors and Characterization for HEP and Photon Science Experiment;2019
5. Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments;Si Detectors and Characterization for HEP and Photon Science Experiment;2019
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