A formalism for the indirect Auger effect. II

Abstract

The Auger recombination rate in indirect semiconductors with zincblende and diamond lattices is investigated, account being taken, for the first time, the properties of overlap integrals near symmetry points and axes. The effect of using theoretically estimated parameters is a reduction of the recombination coefficient by a factor 10. It is explained that the results, and those of the preceding paper, are still subject to uncertainties arising from the band structure so that only the order of magnitude of these coefficients can so far be regarded as known theoretically.