Abstract
A reaction model for the epitaxial growth of GaAs by chemical beam epitaxy using triethylgallium (TEG) and diatomic arsenic, based on experimental observations, is described in detail. The model includes physical effects, which have been partly or totally neglected in earlier studies, involving site-blocking effects, lateral interactions between adsorbed species involved in growth and a role for adsorbed As in inhibiting growth. Computer simulations based on the model are carried out to make comparison with the experimental observations for this growth system, and the approximations involved in making these calculations are outlined. The model is shown to provide good agreement with some of the detailed spectroscopic observations relating toCBE, as well as accounting for the overall growth kinetics observed.
Subject
Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science
Cited by
10 articles.
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