Abstract
Infrared (IR) measurements of the concentrations of H-B pairs formed in borondoped silicon heated in H
2
gas and quenched from a temperature in the range 900-1300 °C have led to a new determination of the hydrogen solubility [H
g
] = 9.1 x 10
21
exp(— 1.80eV/
kT
)cm
-3
and there is evidence that H
2
molecules are also formed. The presence of hydrogen leads to the enhancement of the diffusivity of oxygen impurities at temperatures below 500 °C. Indications that hydrogen is present in as-grown Czochralski silicon have been supported by the observation of H-C complexes using the photoluminescence technique. The analysis of the structure of a hydrogen complex by IR vibrational spectroscopy is illustrated for the H-C
As
pair in GaAs.
Subject
Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science
Cited by
4 articles.
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