Hydrogen solubility in silicon and hydrogen defects present after quenching-Reference-Cited by-同舟云学术

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Hydrogen solubility in silicon and hydrogen defects present after quenching

Published:1993-10-01 Issue:10 Volume:8 Page:1908-1911
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Binns M J,McQuaid S A,Newman R C,Lightowlers E C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=10/a=021/pdf

Reference14 articles.

1. In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere

2. Defects in single-crystal silicon induced by hydrogenation

3. Bonding and thermal stability of implanted hydrogen in silicon

4. On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperatures

5. Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C

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4. Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles;physica status solidi (b);2022-03-16

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