Diamond synthesis: internal growth during C + ion implantation

Abstract

The paper describes a novel technique for synthesizing diamond, which relies on the build-up of extra diamond lattice planes within the bulk crystal. This is achieved by the implantation of high energy (say 20 keV) carbon ions into a heated diamond crystal. Carbon ions of this energy range come to rest hundreds of atomic layers below the surface and, provided they assume an atomic position consistent with the surrounding lattice, will result in diamond synthesis. However, in addition to creating extra material, irradiation of a solid with energetic ions results in both sputtering and radiation damage, both of which could limit the growth of crystalline material. The paper will therefore describe the conditions under which diamond can be synthesized successfully during energetic ion bombardment. Evidence for crystalline growth will be presented in the form of physical and chemical measurements.