Abstract
The graphitization and surface growth of synthetic diamonds by high-fluence irradiation with 30 keV argon and carbon ions have been experimentally studied. scanning electron microscope (SEM) and atomic force microscope (AFM) show removal of traces of mechanical polishing. The ion-induced roughness does not exceed 20 nm. Raman spectroscopy and the measurement of electrical conductivity confirm the graphitization of the surface layer when irradiated with argon ions at the temperature of 230 °C and the diamond structure of the synthesized layer when irradiated with carbon ions at the temperature of 650 °C.
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces