Asymptotic analysis of some two-dimensional diffusion problems

Author:

Abstract

In this paper we discuss two-dimensional surface source and implant problems for a substitutional-interstitial diffusion model. We present asymptotic solutions in the limit of the surface concentration of impurity (or peak concentration of the implant) being far greater than the equilibrium vacancy concentration. Using leading order composite solutions we plot contours of constant impurity concentration. Some of these contours differ markedly from those of the corresponding linear problem, having the ‘bird’s beak’ shape which is frequently observed in experiments. We also discuss a two-dimensional surface source problem for a va­cancy model.

Publisher

The Royal Society

Subject

General Medicine

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Impurity diffusion through strained semiconductors;The Quarterly Journal of Mechanics and Applied Mathematics;2005-10-31

2. The dissociative diffusion mechanism with charge effects II: Two-dimensional in-diffusion;The Quarterly Journal of Mechanics and Applied Mathematics;2004-02-01

3. Emerging areas of mathematical modelling;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;2000-01-15

4. Asymptotic analysis of a combined dissociative and kick-out diffusion mechanism;IMA Journal of Applied Mathematics;1996-02-01

5. An asymptotic analysis of the kick-out diffusion mechanism;ZAMP Zeitschrift f�r angewandte Mathematik und Physik;1995-07

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