Impurity diffusion through strained semiconductors-Reference-Cited by-同舟云学术

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Impurity diffusion through strained semiconductors

Published:2005-10-31 Issue:4 Volume:58 Page:615-643
ISSN:0033-5614
Container-title:The Quarterly Journal of Mechanics and Applied Mathematics
language:en
Short-container-title:The Quarterly Journal of Mechanics and Applied Mathematics

Author:

Allen E. D.

Publisher

Oxford University Press (OUP)

Subject

Applied Mathematics,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics

Link

http://academic.oup.com/qjmam/article-pdf/58/4/615/5447036/hbi025.pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects of aging treatment and strain rates on damage evolution in AA 6061 aluminum alloy in compression;Materials & Design;2013-03

2. X-ray photoemission electron microscopic study of transformed shear bands in AISI 4340 steel;Canadian Metallurgical Quarterly;2012-04

3. Diffusion in a strained cubic crystal;Journal of Engineering Mathematics;2010-02-02

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