Some physical consequences of elementary defects in diamonds

Author:

Abstract

Using the concept of the defect bond, which is somewhat analogous to the covalent bond, a qualitative theory of the physical properties of pure diamond is developed. The theory allows an explanation of many of the diverse physical properties of different diamond specimens and it leads to a correlation table which is based on a new classification of diamonds according to the presence and the arrangement of vacancies or interstitial atoms. Interpretation of the behaviour of diamond counters is now possible and a beginning is made on the quantitative comparison of theory and experiment, from considerations of the optical absorption properties of diamond in terms of a rudimentary electron energy level diagram.

Publisher

The Royal Society

Subject

Pharmacology (medical)

Reference16 articles.

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5. Proc. Roy;Champion F. C.;Soc. A,1953

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1. The chemical composition changes of silicon and phosphorus in the process of native oxide formation of heavily phosphorus doped silicon;Applied Surface Science;2001-09

2. Effect of thermobaric treatment on the defect structure of sphaleritic boron nitride;Journal of Applied Spectroscopy;1992-07

3. Grown-In and Process-Induced Defects;Semiconductor Silicon Crystal Technology;1989

4. Basic Crystallography;Semiconductor Silicon Crystal Technology;1989

5. Electronic properties of particle-counting diamonds - Electronic properties of particle-counting diamonds II. Particle-counting properties;Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences;1967-10-06

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