Fabrication of 3-Dimensional PbZr1−x TixO3 Nanoscale Thin Film Capacitors for High Density Ferroelectric Random Access Memory Devices
-
Published:2006-11-01
Issue:11
Volume:6
Page:3333-3337
-
ISSN:1533-4880
-
Container-title:Journal of Nanoscience and Nanotechnology
-
language:en
-
Short-container-title:j nanosci nanotechnol
Author:
Shin Sangmin,Koo June-Mo,Kim Sukpil,Seo Bum-Seok,Lee Jung-Hyun,Baik Hionsuck,Park Youngsoo,Han Hee,Baik Sunggi,Lee June Key
Abstract
PbZrx Ti1−xO3 (PZT) thin films were deposited on 3-dimensional (3D) nano-scale trench structures for use in giga-bit density ferroelectric random access memories. PZT thin films were deposited by liquid delivery metalorganic chemical
vapor deposition using Pb(thd)2, Zr(MMP)4, and Ti(MMP)4 precursors dissolved in ethyl cyclohexane. Iridium thin films were deposited by atomic layer deposition, and they exhibited excellent properties for capacitor electrodes even at a thickness of 20 nm. The
trench capacitor was composed of three layers, viz. Ir/PZT/Ir (20/60/20 nm), and had a diameter of 250 nm and a height of 400 nm. Almost 100% step coverage was obtained at a deposition temperature of 530 °C. The PZT thin film capacitors with a thickness of 60 nm on a planar structure exhibited
a remnant polarization (Pr of 28 μC/cm2, but the Pr value of the 3D PZT capacitors decreased slightly with decreasing 3D trench pattern size. The transmission electron microscope analysis indicated that the PZT thin films had compositional
uniformity in the 3D trench region. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative proportion exhibited strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under an external
bias of 2.1 V and had a remnant polarization of 19 ∼ 24 μC/cm2.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
39 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献