Phenomenological Analysis of Random Telegraph Noise in Amorphous TiOx -Based Bipolar Resistive Switching Random Access Memory Devices-Reference-Cited by-同舟云学术

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Phenomenological Analysis of Random Telegraph Noise in Amorphous TiOx -Based Bipolar Resistive Switching Random Access Memory Devices

Published:2012-07-01 Issue:7 Volume:12 Page:5392-5396
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Lee Jung-Kyu,Lee Ju-Wan,Bae Jong-Ho,Park Jinwon,Chung Sung-Woong,Roh Jae Sung,Hong Sung-Joo,Lee Jong-Ho

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator;Advanced Intelligent Systems;2023-01-20

2. Effect of weight overlap region on neuromorphic system with memristive synaptic devices;Chaos, Solitons & Fractals;2022-04

3. The Impact of RTN Signal on Array Level Resistance Fluctuation of Resistive Random Access Memory;IEEE Electron Device Letters;2018-05

4. Array-level stability enhancement of 50nm AlxOy ReRAM;Solid-State Electronics;2015-12

5. Effects of Crystallization and Non-Lattice Oxygen Atoms on Cu_xO-Based Resistive Switching Memory;Journal of Nanoscience and Nanotechnology;2013-01-01

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