Affiliation:
1. Department of Electrical and Computer Engineering Inha University Incheon 22212 Korea
2. Department of Electrical and Computer Engineering Seoul National University Seoul 08826 Korea
3. Keysight Technologies Santa Rosa CA 95403 USA
Abstract
Memristor devices can be utilized for various computing applications, and stochastic computing is one of them. The intrinsic stochastic characteristics of the memristor cause unpredictable current fluctuations by the capture and emission of electrons in a trap site. Herein, a true random number generator (TRNG) using the random telegraph noise (RTN) of the memristor as an entropy source is proposed. TiOx/Al2O3 memristors are fabricated, and the capture time probability of the RTN characteristics is modulated to 50% with varying read‐voltage and device conductance state. In addition, the TRNG operations with the RTN current signals as entropy sources are experimentally demonstrated with a customized breadboard, and the randomness is verified with the National Institute of Standards and Technology (NIST) tests.
Funder
Institute for Information and Communications Technology Promotion
Cited by
8 articles.
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