High-Performance Microwave-Annealed Indium-Gallium-Zinc Oxide Thin-Film-Transistors with Buried Conductive Layers-Reference-Cited by-同舟云学术

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High-Performance Microwave-Annealed Indium-Gallium-Zinc Oxide Thin-Film-Transistors with Buried Conductive Layers

Published:2017-05-01 Issue:5 Volume:17 Page:3401-3405
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Lim Cheol-Min¹,Cho Won-Ju¹

Affiliation:

1. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment;Advanced Materials Interfaces;2022-03-25

2. Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment;ACS Applied Materials & Interfaces;2021-02-08

3. Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide Thin-Film Transistors;ACS Applied Materials & Interfaces;2021-01-06

4. Performance Enhancement of Channel-Engineered Al–Zn–Sn–O Thin-Film Transistors with Highly Conductive In–Ga–Zn–O Buried Layer via Vacuum Rapid Thermal Annealing;Journal of Nanoscience and Nanotechnology;2020-08-01

5. Effect of Mechanical Strain on Electrical Performance of Flexible P-Type SnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2019-12

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