AlX Ga1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire-Reference-Cited by-同舟云学术

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AlX Ga1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire

Published:2017-05-01 Issue:5 Volume:17 Page:3279-3284
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Akter Afroja¹,Yoo Geonwook²,Kim Sangin¹,Baac Hyoung Won³,Heo Junseok¹

Affiliation:

1. Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea

2. School of Electronic Engineering, Soongsil University, Seoul 06978, South Korea

3. School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16419, South Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures;Advanced Science;2022-06-05

2. Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption;Scientific Reports;2022-03-11

3. Influence of Size on Optical and Electrical Properties of GaN-Based Membrane μ-LED;Journal of Nanoscience and Nanotechnology;2020-01-01

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