Performance Analysis of Impact of Source/Drain Doping Gradients Well as Roll-Off Widths on Gate Induced Drain Leakage of Double Gate Metal Oxide Semiconductor Field Effect Transistor
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Published:2018-11-01
Issue:11
Volume:13
Page:1705-1710
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Kumar Parveen,Gill Sandeep Singh
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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