Author:
Sharma Sanjeev Kumar,Singh Jeetendra,Raj Balwinder,Khosla Mamta
Abstract
In this paper, InGaAs/InP heterostructure based Cylindrical Gate Nanowire MOSFETs (CGNWMOSFET) is designed and its performance has been analyzed using silvaco ATLAS TCAD tool. The influence of the barrier thickness is investigated for perusal performance of an InGaAs/InP heterostructure
CGNWMOSFET. The performance compared for various parameters on current, off current, Cut off Frequency (fT), Transconductance (gm), Gate to Source capacitance (Cgs), and Gate to Drain capacitance (Cgd). Results show significant
variation in the performance of InGaAs/InP heterostructure CGNWMOSFET by varying the barrier thickness.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
14 articles.
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