Study of energy band modulation of Ge-based material system for monolithic optoelectronic integration chips-Reference-Cited by-同舟云学术

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Study of energy band modulation of Ge-based material system for monolithic optoelectronic integration chips

Published:2017-10-01 Issue:5 Volume:7 Page:369-379
ISSN:2158-5849
Container-title:Materials Express
language:en
Short-container-title:mat express

Author:

Wei Qing,Song Jianjun,Zhou Ciqi,Bao Wentao,Miao Yuanhao,Hu Huiyong,Zhang Heming,Wang Bin

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance;Journal of Electronic Materials;2024-01-26

2. Electronic properties and defect levels induced by n/p-type defect-complexes in Ge;Materials Science in Semiconductor Processing;2022-11

3. Inversion Layer Physics and Device Design for DR-Ge_1-xSn_x Metal-Oxide-Semiconductor Applicated in Monolithic Same Layer Optoelectronic Integration;J NANOELECTRON OPTOE;2020

4. Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit;Advances in Condensed Matter Physics;2020-02-26

5. Study on Carrier Mobility Model for PD-Ge Monolithic Optoelectronic Integration Chips;Journal of Nanoelectronics and Optoelectronics;2019-12-01

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