Effects of Interfacial Layer on Characteristics of TiN/ZrO<SUB>2</SUB> Structures-Reference-Cited by-同舟云学术

Effects of Interfacial Layer on Characteristics of TiN/ZrO₂ Structures

Published:2011-09-01 Issue:9 Volume:11 Page:8309-8312
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Kim Younsoo,Kang Sang Yeol,Choi Jae Hyoung,Lim Jae Soon,Park Min Young,Chung Suk-Jin,Chung Jaegwan,Lee Hyung Ik,Kim Ki Hong,Kyoung Yong Koo,Heo Sung,Yoo Cha Young,Kang Ho-Kyu

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement in dielectric properties of ZrO2 thin film by employing a Zr precursor with enhanced thermal stability in high-temperature atomic layer deposition;Materials Today Communications;2024-08

2. Suppressing Interfacial Layer Formation in ZrO₂-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier;ACS Applied Electronic Materials;2024-04-24

3. Enhancing chemisorption efficiency and thin-film characteristics via a discrete feeding method in high-k dielectric atomic layer deposition for preventing interfacial layer formation;Journal of Materials Chemistry C;2023

4. An Empirical Investigation on the Effect of Oxygen Vacancy in ZrO2 Thin Film on the Frequency-Dependent Capacitance Degradation in the Metal–Insulator–Metal Capacitor;IEEE Transactions on Electron Devices;2021-11

5. Phase-gradient atomic layer deposition of TiO2 thin films by plasma-induced local crystallization;Ceramics International;2021-10