Synthesis of 3C-SiC Nanocrystals at the SiO<SUB>2</SUB>/Si Interface by CO<SUB>2</SUB> Thermal Treatment-Reference-Cited by-同舟云学术

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Synthesis of 3C-SiC Nanocrystals at the SiO₂/Si Interface by CO₂ Thermal Treatment

Published:2011-10-01 Issue:10 Volume:11 Page:9232-9236
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Deokar G.,D'Angelo M.,Cavellin C. Deville

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of alternating precursor supply and gas flow on the LPCVD growth behavior of polycrystalline 3C-SiC thin films on Si;Sensors and Actuators A: Physical;2024-07

2. Polycrystalline Lpcvd 3c-Sic Thin Films on Sio2 Using Alternating Supply Deposition;2024

3. Impact of Alternating Precursor Supply and Gas Flow on the Lpcvd Growth Behavior of Polycrystalline 3c-Sic Thin Films on Si;2023

4. High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices;Applied Physics Express;2021-09-22

5. Chemical fixation of CO2 on activated Si: Producing graphitic carbon-stabilized Si particles for Li-storage;Energy Storage Materials;2020-10

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