Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO<SUB>2</SUB>/<I>n</I>-4H-SiC Structure-Reference-Cited by-同舟云学术

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Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO₂/n-4H-SiC Structure

Published:2016-10-01 Issue:5 Volume:11 Page:626-630
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Alialy S.,Yıldız D. E.,Altındal Ş.

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics;Materials Science in Semiconductor Processing;2024-06

2. The evaluation of the Al/ZnO/Si/Al heterojunction diode current-conducting mechanisms;International Journal of Modern Physics B;2023-08-19

3. Scrutinization of non‒saturation behaviour of reverse current‒voltage characteristics in Ni/SiO2/p-Si/Al diodes;Superlattices and Microstructures;2021-12

4. A study on electrical properties of Au/4H-SiC Schottky diode under illumination;Journal of Materials Science: Materials in Electronics;2021-07-17

5. Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode;Journal of Materials Science: Materials in Electronics;2021-03-26

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