Electrochemical Growth of InSb Nanowires and Report of a Single Nanowire Field Effect Transistor-Reference-Cited by-同舟云学术

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Electrochemical Growth of InSb Nanowires and Report of a Single Nanowire Field Effect Transistor

Published:2008-07-01 Issue:2 Volume:3 Page:199-202
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Khan M. Ibrahim,Penchev Miroslav,Jing Xiaoye,Wang Xu,Bozhilov Krassimir N.,Ozkan Mihrimah,Ozkan Cengiz S.

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In Situ TEM Studies of III-V Nanowire Growth Mechanism;Nanowires - Recent Progress;2021-07-14

2. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires;Nature Communications;2019-04-10

3. Advances in InSb and InAs Nanowire Based Nanoelectronic Field Effect Transistors;Nanoelectronics;2019

4. Understanding the Mechanisms that Affect the Quality of Electrochemically Grown Semiconducting Nanowires;Semiconductors - Growth and Characterization;2018-03-07

5. Template-Assisted Electrochemical Synthesis of p-Type InSb Nanowires;ECS Journal of Solid State Science and Technology;2017

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